奈米機電系統中心_英文版

Machine Name

SUSS / MA/BA8 Gen3

Application

Critical imaging transfer equipment for manufacturing MEMS, optoelectronics, and diode large-scale integrated circuits. The principle involves using ultra-violet light to pass through patterned templates such as photomasks or films, in combination with a developer to remove the photoresist on the wafer surface, thereby forming the integrated circuit patterns.

Machine

specifications

Ÿ   Mask holder size: 3”~6” (maximum exposure area of holder is 4”)

Ÿ   Wafer size: up to 6”

Ÿ   Exposure area: 8”

Ÿ   Mercury lamp: 1000 W

Ÿ   Exposure wavelengths: I-line (365nm), H-line (405nm), G-line (436nm)

Ÿ   Exposure intensity: As indicated on site

Ÿ   Alignment system: Double-sided

Ÿ   Resolution: 1.5~3.5 µm

Notices

1.         Only trained and certified users are allowed to operate this instrument.

2.         Since the photoresist is an organic solvent, please wear acid and alkali-resistant gloves during operation.

3.         UV exposure can harm your eyes, so do not look directly at it.

4.         Handle the stage gently when changing it to avoid wear.

5.         Carefully rotate the XY knobs when moving the wafer stage to prevent damage.

6.         Ensure the lens XY position is at the origin during exposure.

7.         Please reset the equipment after use.

User's Guide

Ÿ   User manual